2N5401 transistor (pnp) feature power dissipation p cm : 0.625 w (tamb=25 ) collector current i cm : - 0.6 a collector-base voltage v (br)cbo : -160 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= -100 a, i e =0 -160 v collector-emitter breakdown voltage v(br) ceo ic= -1 ma, i b =0 -150 v emitter-base breakdown voltage v(br) ebo i e = -10 a, i c =0 -5 v collector cut-off current i cbo v cb = -120 v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -4 v, i c =0 -0.1 a h fe(1) v ce = -5 v, i c =-1 ma 80 h fe(2) v ce = -5 v, i c = -10 ma 80 250 dc current gain h fe(3) v ce = -5 v, i c =-50 ma 50 collector-emitter saturation voltage v ce (sat) i c = -50 ma, i b = -5 ma -0.5 v base-emitter saturation voltage v be (sat) i c = -50 ma, i b = -5 ma -1 v transition frequency f t v ce =-5v, i c =-10ma f =30mhz 100 mhz 1 2 3 to-92 1. emitter 2. base 3. collector 2N5401 c l a ssif i c a t ion of h fe (2 ) ra n k a b c r a nge 80- 160 120- 180 150- 250 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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